Improved high-Q microwave dielectric material using B2O3-doped MgNb2O6 ceramics: Fid-Bau Portal

Improved high-Q microwave dielectric material using B2O3-doped MgNb2O6 ceramics

Huang, C. L. / Chiang, K. H.

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Improved high-Q microwave dielectric material using B2O3-doped MgNb2O6 ceramics

Huang, C. L. / Chiang, K. H.

Improved high-Q microwave dielectric material using B2O3-doped MgNb2O6 ceramics

Huang, C. L. / Chiang, K. H.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Improved high-Q microwave dielectric material using B2O3-doped MgNb2O6 ceramics

Contributors:

Huang, C. L. (author) / Chiang, K. H. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING A ; 474 ; 243-246

Publication date:

2008-01-01

Size:

4 pages

ISSN:

0921-5093

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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