A platform for research: civil engineering, architecture and urbanism
Influence of oxygen partial pressure on optoelectrical properties of aluminum-doped CdO thin films
Influence of oxygen partial pressure on optoelectrical properties of aluminum-doped CdO thin films
Influence of oxygen partial pressure on optoelectrical properties of aluminum-doped CdO thin films
Gupta, R. K. (author) / Ghosh, K. (author) / Patel, R. (author) / Mishra, S. R. (author) / Kahol, P. K. (author)
APPLIED SURFACE SCIENCE ; 254 ; 5868-5873
2008-01-01
6 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Chemical bonding and optoelectrical properties of ruthenium doped yttrium oxide thin films
British Library Online Contents | 2013
|British Library Online Contents | 2014
|Thickness dependence of optoelectrical properties of tungsten-doped indium oxide films
British Library Online Contents | 2009
|Influence of Yb-doping on optoelectrical properties of CdO nanocrystalline films
British Library Online Contents | 2011
|Effect of thickness on optoelectrical properties of Mo-doped indium oxide films
British Library Online Contents | 2008
|