Ambipolar, Single-Component, Metal-Organic Thin-Film Transistors with High and Balanced Hole and Electron Mobilities: Fid-Bau Portal

Ambipolar, Single-Component, Metal-Organic Thin-Film Transistors with High and Balanced Hole and Electron Mobilities

Noro, S. i. / Takenobu, T. / Iwasa, Y. / Chang, H. C. / Kitagawa, S. / Akutagawa, T. / Nakamura, T.

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Ambipolar, Single-Component, Metal-Organic Thin-Film Transistors with High and Balanced Hole and Electron Mobilities

Noro, S. i. / Takenobu, T. / Iwasa, Y. / Chang, H. C. / Kitagawa, S. / Akutagawa, T. / Nakamura, T.

Ambipolar, Single-Component, Metal-Organic Thin-Film Transistors with High and Balanced Hole and Electron Mobilities

Noro, S. i. / Takenobu, T. / Iwasa, Y. / Chang, H. C. / Kitagawa, S. / Akutagawa, T. / Nakamura, T.

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Title:

Ambipolar, Single-Component, Metal-Organic Thin-Film Transistors with High and Balanced Hole and Electron Mobilities

Contributors:

Noro, S. i. (author) / Takenobu, T. (author) / Iwasa, Y. (author) / Chang, H. C. (author) / Kitagawa, S. (author) / Akutagawa, T. (author) / Nakamura, T. (author)

Published in:

ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 20 ; 3399-3403

Publication date:

2008-01-01

Size:

5 pages

ISSN:

0935-9648

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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