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    Electrical characteristics of polycrystalline Si layers embedded into high-k Al2O3 gate layers

    New search for: Park, B.
    New search for: Cho, K.
    New search for: Kim, S.

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    Electrical characteristics of polycrystalline Si layers embedded into high-k Al2O3 gate layers

    New search for: Park, B.
    New search for: Cho, K.
    New search for: Kim, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Electrical characteristics of polycrystalline Si layers embedded into high-k Al2O3 gate layers

    New search for: Park, B.
    New search for: Cho, K.
    New search for: Kim, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Electrical characteristics of polycrystalline Si layers embedded into high-k Al2O3 gate layers

    Contributors:

    Park, B. (author) / Cho, K. (author) / Kim, S. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 254 ; 7905-7908

    Publication date:

    2008-01-01

    Size:

    4 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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