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Theoretical analysis of transport in ferromagnetic single-electron transistors in the sequential tunnelling regime
Theoretical analysis of transport in ferromagnetic single-electron transistors in the sequential tunnelling regime
Theoretical analysis of transport in ferromagnetic single-electron transistors in the sequential tunnelling regime
Wisniewska, J. (author) / Weymann, I. (author)
MATERIALS SCIENCE -WROCLAW- ; 26 ; 715-722
2008-01-01
8 pages
Article (Journal)
English
DDC:
620.11
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