A platform for research: civil engineering, architecture and urbanism
Metal-semiconductor interface in extreme temperature conditions
Metal-semiconductor interface in extreme temperature conditions
Metal-semiconductor interface in extreme temperature conditions
Bulat, L. P. (author) / Erofeeva, I. A. (author) / Vorobiev, Y. V. (author) / Gonzalez-Hernandez, J. (author)
APPLIED SURFACE SCIENCE ; 255 ; 659-661
2008-01-01
3 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Fabrication of metal–ceramic membranes withstanding extreme operating conditions
Springer Verlag | 2017
|Formation of molten metal films during metal-on-metal slip under extreme interfacial conditions
British Library Online Contents | 2004
|Metal-diamond semiconductor interface and photodiode application
British Library Online Contents | 2008
|Electronic structure of a metal-semiconductor interface
Springer Verlag | 1990
|Assessing the Impact of Extreme Temperature Conditions on Social Vulnerability
DOAJ | 2021
|