Development of High Temperature Lateral HV and LV JFETs in 4H-SiC: Fid-Bau Portal

Development of High Temperature Lateral HV and LV JFETs in 4H-SiC

Zhang, Y. / Sheng, K. / Su, M. / Zhao, J.H. / Alexandrov, P. / Fursin, L.

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Development of High Temperature Lateral HV and LV JFETs in 4H-SiC

Zhang, Y. / Sheng, K. / Su, M. / Zhao, J.H. / Alexandrov, P. / Fursin, L.

Development of High Temperature Lateral HV and LV JFETs in 4H-SiC

Zhang, Y. / Sheng, K. / Su, M. / Zhao, J.H. / Alexandrov, P. / Fursin, L.

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Check availability in my library

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Document information

Title:

Development of High Temperature Lateral HV and LV JFETs in 4H-SiC

Contributors:

Zhang, Y. (author) / Sheng, K. (author) / Su, M. (author) / Zhao, J.H. (author) / Alexandrov, P. (author) / Fursin, L. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 1091-1094

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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