A platform for research: civil engineering, architecture and urbanism
Characterization of V-Defects in InGaN Single-Quantum-Well Films at Nanometer Level by High Spatial Resolution Cathodoluminescence Spectroscopy
Characterization of V-Defects in InGaN Single-Quantum-Well Films at Nanometer Level by High Spatial Resolution Cathodoluminescence Spectroscopy
Characterization of V-Defects in InGaN Single-Quantum-Well Films at Nanometer Level by High Spatial Resolution Cathodoluminescence Spectroscopy
Yoshikawa, M. (author) / Murakami, M. (author) / Fujita, T. (author) / Inoue, K. (author) / Matsuda, K. (author) / Ishida, H. (author) / Harima, H. (author)
MATERIALS SCIENCE FORUM ; 600/603 ; 1305-1308
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2009
|Cathodoluminescence characteristics of InGaN/GaN quantum wells grown by MOCVD
British Library Online Contents | 2001
|Spatially-resolved cathodoluminescence spectroscopy of ZnO defects
British Library Online Contents | 2017
|Spatially-resolved cathodoluminescence spectroscopy of ZnO defects
British Library Online Contents | 2017
|Characterization of Nanometer-Sized ZnO by Raman and Cathodoluminescence Spectroscopies
British Library Online Contents | 2009
|