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    Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition

    New search for: Kato, M.
    New search for: Ogawa, K.
    New search for: Ichimura, M.

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    Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition

    New search for: Kato, M.
    New search for: Ogawa, K.
    New search for: Ichimura, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition

    New search for: Kato, M.
    New search for: Ogawa, K.
    New search for: Ichimura, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
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    Document information
    Title:

    Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition

    Contributors:

    Kato, M. (author) / Ogawa, K. (author) / Ichimura, M. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 600/603 ; 373-376

    Publication date:

    2009-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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