Effects of Hydrogen Partial Pressure on Boron-Doped Hydrogenated Amorphous Silicon (a-Si:H(B)) Properties: Fid-Bau Portal

Effects of Hydrogen Partial Pressure on Boron-Doped Hydrogenated Amorphous Silicon (a-Si:H(B)) Properties

Khelifati, N. / Cherfi, R. / Keffous, A. / Rahal, A. / Kechouane, M.

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Effects of Hydrogen Partial Pressure on Boron-Doped Hydrogenated Amorphous Silicon (a-Si:H(B)) Properties

Khelifati, N. / Cherfi, R. / Keffous, A. / Rahal, A. / Kechouane, M.

Effects of Hydrogen Partial Pressure on Boron-Doped Hydrogenated Amorphous Silicon (a-Si:H(B)) Properties

Khelifati, N. / Cherfi, R. / Keffous, A. / Rahal, A. / Kechouane, M.

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Title:

Effects of Hydrogen Partial Pressure on Boron-Doped Hydrogenated Amorphous Silicon (a-Si:H(B)) Properties

Contributors:

Khelifati, N. (author) / Cherfi, R. (author) / Keffous, A. (author) / Rahal, A. (author) / Kechouane, M. (author) / Gabouze, N.

Published in:

Thin Films and Porous Materials ; 81-86

MATERIALS SCIENCE FORUM ; 609

Publication date:

2009-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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