High Electron Mobility and Ambient Stability in Solution-Processed Perylene-Based Organic Field-Effect Transistors: Fid-Bau Portal

High Electron Mobility and Ambient Stability in Solution-Processed Perylene-Based Organic Field-Effect Transistors

Piliego, C. / Jarzab, D. / Gigli, G. / Chen, Z. / Facchetti, A. / Loi, M. A.

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High Electron Mobility and Ambient Stability in Solution-Processed Perylene-Based Organic Field-Effect Transistors

Piliego, C. / Jarzab, D. / Gigli, G. / Chen, Z. / Facchetti, A. / Loi, M. A.

High Electron Mobility and Ambient Stability in Solution-Processed Perylene-Based Organic Field-Effect Transistors

Piliego, C. / Jarzab, D. / Gigli, G. / Chen, Z. / Facchetti, A. / Loi, M. A.

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Document information

Title:

High Electron Mobility and Ambient Stability in Solution-Processed Perylene-Based Organic Field-Effect Transistors

Contributors:

Piliego, C. (author) / Jarzab, D. (author) / Gigli, G. (author) / Chen, Z. (author) / Facchetti, A. (author) / Loi, M. A. (author)

Published in:

ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 21 ; 1573-1576

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0935-9648

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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