High Voltage AlGaN/GaN HEMTs Employing a Tapered Field Plate: Fid-Bau Portal

High Voltage AlGaN/GaN HEMTs Employing a Tapered Field Plate

Choi, Y.H. / Lim, J.Y. / Cho, K.H. / Kim, Y.S. / Han, M.K.

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High Voltage AlGaN/GaN HEMTs Employing a Tapered Field Plate

Choi, Y.H. / Lim, J.Y. / Cho, K.H. / Kim, Y.S. / Han, M.K.

High Voltage AlGaN/GaN HEMTs Employing a Tapered Field Plate

Choi, Y.H. / Lim, J.Y. / Cho, K.H. / Kim, Y.S. / Han, M.K.

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Check availability in my library

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Document information

Title:

High Voltage AlGaN/GaN HEMTs Employing a Tapered Field Plate

Contributors:

Choi, Y.H. (author) / Lim, J.Y. (author) / Cho, K.H. (author) / Kim, Y.S. (author) / Han, M.K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 971-974

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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