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New tetramer structures in the initial process of Si homoepitaxial growth on Si (001)

Wang, C. / Zhang, Y. / Jia, Y.

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New tetramer structures in the initial process of Si homoepitaxial growth on Si (001)

Wang, C. / Zhang, Y. / Jia, Y.

New tetramer structures in the initial process of Si homoepitaxial growth on Si (001)

Wang, C. / Zhang, Y. / Jia, Y.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

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Document information

Title:

New tetramer structures in the initial process of Si homoepitaxial growth on Si (001)

Contributors:

Wang, C. (author) / Zhang, Y. (author) / Jia, Y. (author)

Published in:

APPLIED SURFACE SCIENCE ; 256 ; 744-748

Publication date:

2009-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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