Band gap energy and bowing parameter of In-rich InAlN films grown by magnetron sputtering: Fid-Bau Portal

Band gap energy and bowing parameter of In-rich InAlN films grown by magnetron sputtering

He, H. / Cao, Y. / Fu, R. / Guo, W. / Huang, Z. / Wang, M. / Huang, C. / Huang, J. / Wang, H.

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Band gap energy and bowing parameter of In-rich InAlN films grown by magnetron sputtering

He, H. / Cao, Y. / Fu, R. / Guo, W. / Huang, Z. / Wang, M. / Huang, C. / Huang, J. / Wang, H.

Band gap energy and bowing parameter of In-rich InAlN films grown by magnetron sputtering

He, H. / Cao, Y. / Fu, R. / Guo, W. / Huang, Z. / Wang, M. / Huang, C. / Huang, J. / Wang, H.

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Order at Subito €

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Document information

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Document information

Title:

Band gap energy and bowing parameter of In-rich InAlN films grown by magnetron sputtering

Contributors:

He, H. (author) / Cao, Y. (author) / Fu, R. (author) / Guo, W. (author) / Huang, Z. (author) / Wang, M. (author) / Huang, C. (author) / Huang, J. (author) / Wang, H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 256 ; 1812-1816

Publication date:

2010-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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