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Achieving atomically flat surfaces for LiGaO2 substrates for epitaxial growth of GaN films

Li, G. / Mu, S. / Shih, S. J.

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Achieving atomically flat surfaces for LiGaO2 substrates for epitaxial growth of GaN films

Li, G. / Mu, S. / Shih, S. J.

Achieving atomically flat surfaces for LiGaO2 substrates for epitaxial growth of GaN films

Li, G. / Mu, S. / Shih, S. J.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Achieving atomically flat surfaces for LiGaO2 substrates for epitaxial growth of GaN films

Contributors:

Li, G. (author) / Mu, S. (author) / Shih, S. J. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 170 ; 9-14

Publication date:

2010-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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