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Top-Gate Organic Thin-Film Transistors Constructed by a General Lamination Approach
Top-Gate Organic Thin-Film Transistors Constructed by a General Lamination Approach
Top-Gate Organic Thin-Film Transistors Constructed by a General Lamination Approach
ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 22 ; 3537-3541
2010-01-01
5 pages
Article (Journal)
English
DDC:
620.11
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