Catalyst-free growth of well-aligned arsenic-doped ZnO nanowires by chemical vapor deposition method: Fid-Bau Portal

Catalyst-free growth of well-aligned arsenic-doped ZnO nanowires by chemical vapor deposition method

Feng, Q. J. / Hu, L. Z. / Liang, H. W. / Feng, Y. / Wang, J. / Sun, J. C. / Zhao, J. Z. / Li, M. K. / Dong, L.

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Catalyst-free growth of well-aligned arsenic-doped ZnO nanowires by chemical vapor deposition method

Feng, Q. J. / Hu, L. Z. / Liang, H. W. / Feng, Y. / Wang, J. / Sun, J. C. / Zhao, J. Z. / Li, M. K. / Dong, L.

Catalyst-free growth of well-aligned arsenic-doped ZnO nanowires by chemical vapor deposition method

Feng, Q. J. / Hu, L. Z. / Liang, H. W. / Feng, Y. / Wang, J. / Sun, J. C. / Zhao, J. Z. / Li, M. K. / Dong, L.

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Document information

Title:

Catalyst-free growth of well-aligned arsenic-doped ZnO nanowires by chemical vapor deposition method

Contributors:

Feng, Q. J. (author) / Hu, L. Z. (author) / Liang, H. W. (author) / Feng, Y. (author) / Wang, J. (author) / Sun, J. C. (author) / Zhao, J. Z. (author) / Li, M. K. (author) / Dong, L. (author)

Published in:

APPLIED SURFACE SCIENCE ; 257 ; 1084-1087

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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