Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thickness: Fid-Bau Portal

Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thickness

Sengupta, S. / Halder, N. / Chakrabarti, S.

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Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thickness

Sengupta, S. / Halder, N. / Chakrabarti, S.

Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thickness

Sengupta, S. / Halder, N. / Chakrabarti, S.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thickness

Contributors:

Sengupta, S. (author) / Halder, N. (author) / Chakrabarti, S. (author)

Published in:

MATERIALS RESEARCH BULLETIN ; 45 ; 1593-1597

Publication date:

2010-01-01

Size:

5 pages

ISSN:

0025-5408

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11 / 620

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