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Anisotropic characteristics of a-plane GaN films grown on g-LiAlO2 (302) substrates by MOCVD
Anisotropic characteristics of a-plane GaN films grown on g-LiAlO2 (302) substrates by MOCVD
Anisotropic characteristics of a-plane GaN films grown on g-LiAlO2 (302) substrates by MOCVD
APPLIED SURFACE SCIENCE ; 257 ; 1181-1184
2010-01-01
4 pages
Article (Journal)
English
DDC:
621.35
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