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    Influence of Phase-Change Materials and Additional Layer on Performance of Lateral Phase-Change Memories

    New search for: Yin, Y.
    New search for: Hosaka, S.
    New search for: Hanaizumi, O.
    New search for: Unno, M.
    New search for: Miura, K.

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    Influence of Phase-Change Materials and Additional Layer on Performance of Lateral Phase-Change Memories

    New search for: Yin, Y.
    New search for: Hosaka, S.
    New search for: Hanaizumi, O.
    New search for: Unno, M.
    New search for: Miura, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Influence of Phase-Change Materials and Additional Layer on Performance of Lateral Phase-Change Memories

    New search for: Yin, Y.
    New search for: Hosaka, S.
    New search for: Hanaizumi, O.
    New search for: Unno, M.
    New search for: Miura, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Influence of Phase-Change Materials and Additional Layer on Performance of Lateral Phase-Change Memories

    Contributors:

    Yin, Y. (author) / Hosaka, S. (author) / Hanaizumi, O. / Unno, M. / Miura, K.

    Published in:

    Silicon Science and Advanced Micro-Device Engineering II ; 106-110

    KEY ENGINEERING MATERIALS ; 497

    Publication date:

    2012-01-01

    Size:

    5 pages

    ISSN:

    1013-9826

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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