A platform for research: civil engineering, architecture and urbanism
Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser
Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser
Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser
Li, S. G. (author) / Gong, Q. (author) / Cao, C. F. (author) / Wang, X. Z. (author) / Chen, P. (author) / Yue, L. (author) / Liu, Q. B. (author) / Wang, H. L. (author) / Ma, C. H. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 15 ; 86-90
2012-01-01
5 pages
Article (Journal)
English
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
High-Temperature Lasing Characteristics of ZnO Epilayers
British Library Online Contents | 2006
|British Library Online Contents | 2005
|British Library Online Contents | 2012
|Lasing from Semiconductor Quantum Rods in a Cylindrical Microcavity
British Library Online Contents | 2002
|