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    Preparation and characterization of one-dimensional GaN nanorods with Tb intermediate layer

    New search for: Shi, F.
    New search for: Xue, C.

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    Preparation and characterization of one-dimensional GaN nanorods with Tb intermediate layer

    New search for: Shi, F.
    New search for: Xue, C.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Preparation and characterization of one-dimensional GaN nanorods with Tb intermediate layer

    New search for: Shi, F.
    New search for: Xue, C.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
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    Document information
    Title:

    Preparation and characterization of one-dimensional GaN nanorods with Tb intermediate layer

    Contributors:

    Shi, F. (author) / Xue, C. (author)

    Published in:

    MATERIALS RESEARCH BULLETIN ; 47 ; 4329-4334

    Publication date:

    2012-01-01

    Size:

    6 pages

    ISSN:

    0025-5408

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11 / 620

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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