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    Influence of loading holding time under quasistatic indentation on electrical properties and phase transformations of silicon

    New search for: Shikimaka, O.
    New search for: Prisacaru, A.
    New search for: Bruk, L.
    New search for: Usatyi, Y.
    New search for: Burlacu, A.

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    Influence of loading holding time under quasistatic indentation on electrical properties and phase transformations of silicon

    New search for: Shikimaka, O.
    New search for: Prisacaru, A.
    New search for: Bruk, L.
    New search for: Usatyi, Y.
    New search for: Burlacu, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Influence of loading holding time under quasistatic indentation on electrical properties and phase transformations of silicon

    New search for: Shikimaka, O.
    New search for: Prisacaru, A.
    New search for: Bruk, L.
    New search for: Usatyi, Y.
    New search for: Burlacu, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Influence of loading holding time under quasistatic indentation on electrical properties and phase transformations of silicon

    Contributors:

    Shikimaka, O. (author) / Prisacaru, A. (author) / Bruk, L. (author) / Usatyi, Y. (author) / Burlacu, A. (author)

    Published in:

    SURFACE ENGINEERING AND APPLIED ELECTROCHEMISTRY C/C OF ELEKTRONNAIA OBRABOTKA MATERIALOV ; 48 ; 444-449

    Publication date:

    2012-01-01

    Size:

    6 pages

    ISSN:

    1068-3755

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.44 / 660.297

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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