A platform for research: civil engineering, architecture and urbanism
Structural characterization of GaAs self-assembled quantum dots grown by Droplet Epitaxy on Ge virtual substrates on Si
Structural characterization of GaAs self-assembled quantum dots grown by Droplet Epitaxy on Ge virtual substrates on Si
Structural characterization of GaAs self-assembled quantum dots grown by Droplet Epitaxy on Ge virtual substrates on Si
Frigeri, C. (author) / Bietti, S. (author) / Isella, G. (author) / Sanguinetti, S. (author)
APPLIED SURFACE SCIENCE ; 267 ; 86-89
2013-01-01
4 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Cathodoluminescence of GaSb/GaAs self-assembled quantum dots grown by MOCVD
British Library Online Contents | 2004
|Transmission electron microscopy study of vertical quantum dots molecules grown by droplet epitaxy
British Library Online Contents | 2010
|British Library Online Contents | 2002
|Electrical characterization of self-assembled InAs/GaAs quantum dots by capacitance techniques
British Library Online Contents | 2002
|InAs dots grown on InP (001) by droplet hetero-epitaxy using OMVPE
British Library Online Contents | 1998
|