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A Possible Mechanism for Hexagonal Void Movement Observed during Sublimation Growth of SiC Single Crystals
A Possible Mechanism for Hexagonal Void Movement Observed during Sublimation Growth of SiC Single Crystals
A Possible Mechanism for Hexagonal Void Movement Observed during Sublimation Growth of SiC Single Crystals
Fujimoto, T. (author) / Tsuge, H. (author) / Katsuno, M. (author) / Sato, S. (author) / Yashiro, H. (author) / Hirano, H. (author) / Yano, T. (author) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A.
2013-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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