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    Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode

    New search for: Ivanov, P.A.
    New search for: Grekhov, I.V.
    New search for: Lebedev, A.A.
    New search for: Davydov, S.Y.
    New search for: Ivanov, P.A.
    New search for: Levinshtein, M.E.

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    Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode

    New search for: Ivanov, P.A.
    New search for: Grekhov, I.V.
    New search for: Lebedev, A.A.
    New search for: Davydov, S.Y.
    New search for: Ivanov, P.A.
    New search for: Levinshtein, M.E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode

    New search for: Ivanov, P.A.
    New search for: Grekhov, I.V.
    New search for: Lebedev, A.A.
    New search for: Davydov, S.Y.
    New search for: Ivanov, P.A.
    New search for: Levinshtein, M.E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
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    Document information
    Title:

    Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode

    Contributors:

    Ivanov, P.A. (author) / Grekhov, I.V. (author) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A. / Levinshtein, M.E.

    Published in:

    Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 865-868

    MATERIALS SCIENCE FORUM ; 740/742

    Publication date:

    2013-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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