Annealing effects on self-assembled Ge/Si (100) islands prepared by ion beam sputtering deposition: Fid-Bau Portal

Annealing effects on self-assembled Ge/Si (100) islands prepared by ion beam sputtering deposition

Yang, J. / Wang, C. / Tao, D.P. / Yang, Y.

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Annealing effects on self-assembled Ge/Si (100) islands prepared by ion beam sputtering deposition

Yang, J. / Wang, C. / Tao, D.P. / Yang, Y.

Annealing effects on self-assembled Ge/Si (100) islands prepared by ion beam sputtering deposition

Yang, J. / Wang, C. / Tao, D.P. / Yang, Y.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Annealing effects on self-assembled Ge/Si (100) islands prepared by ion beam sputtering deposition

Contributors:

Yang, J. (author) / Wang, C. (author) / Tao, D.P. (author) / Yang, Y. (author)

Published in:

MATERIALS TECHNOLOGY ; 27 ; 133-135

Publication date:

2012-01-01

Size:

3 pages

ISSN:

1066-7857

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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