A platform for research: civil engineering, architecture and urbanism
Structural Improvement of 920 nm Optically Pumped Semiconductor Vertical External-Cavity Surface Emitting Laser (OPS-VECSEL)
Structural Improvement of 920 nm Optically Pumped Semiconductor Vertical External-Cavity Surface Emitting Laser (OPS-VECSEL)
Structural Improvement of 920 nm Optically Pumped Semiconductor Vertical External-Cavity Surface Emitting Laser (OPS-VECSEL)
Liang, X.M. (author) / Qin, L. (author) / Ning, Y.Q. (author) / Liu, Y. (author) / Wang, L.J. (author) / Fu, Y.
2013-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 1994
|MBE grown optically pumped semiconductor disk lasers emitting at 940nm
British Library Online Contents | 2008
|Vertical-Cavity Surface-Emitting Lasers
British Library Online Contents | 2002
|Localized epitaxy for vertical cavity surface emitting laser applications
British Library Online Contents | 1997
|Efficient cw Optically Pumped Ni:MgF2 Laser
NTIS | 1978
|