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    A silicon/indium arsenide source structure to suppress the parasitic bipolar-induced breakdown effect in SOI MOSFETs

    New search for: Abbasi, A.
    New search for: Orouji, A. A.

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    A silicon/indium arsenide source structure to suppress the parasitic bipolar-induced breakdown effect in SOI MOSFETs

    New search for: Abbasi, A.
    New search for: Orouji, A. A.

    Access

    Access via TIB
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    A silicon/indium arsenide source structure to suppress the parasitic bipolar-induced breakdown effect in SOI MOSFETs

    New search for: Abbasi, A.
    New search for: Orouji, A. A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Title:

    A silicon/indium arsenide source structure to suppress the parasitic bipolar-induced breakdown effect in SOI MOSFETs

    Contributors:

    Abbasi, A. (author) / Orouji, A. A. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 16 ; 1821-1827

    Publication date:

    2013-01-01

    Size:

    7 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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