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Influence of oxygen vacancy on resistive switching property of Ag/Nb:SrTiO3/Ti structure
Influence of oxygen vacancy on resistive switching property of Ag/Nb:SrTiO3/Ti structure
Influence of oxygen vacancy on resistive switching property of Ag/Nb:SrTiO3/Ti structure
Shen, J.X. (author) / Qian, H.Q. (author) / Zhang, Y. (author) / Wang, G.F. (author) / Shen, J.Q. (author) / Wang, S.L. (author) / Cui, C. (author) / Li, P.G. (author) / Lei, M. (author) / Tang, W.H. (author)
MATERIALS TECHNOLOGY ; 28 ; 375-379
2013-01-01
5 pages
Article (Journal)
English
DDC:
620.11
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