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    A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non-Volatile Memory Devices

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    New search for: Lee, S.
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    A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non-Volatile Memory Devices

    New search for: Park, J.
    New search for: Lee, S.
    New search for: Lee, J.
    New search for: Yong, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non-Volatile Memory Devices

    New search for: Park, J.
    New search for: Lee, S.
    New search for: Lee, J.
    New search for: Yong, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non-Volatile Memory Devices

    Contributors:

    Park, J. (author) / Lee, S. (author) / Lee, J. (author) / Yong, K. (author)

    Published in:

    ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 25 ; 6423-6429

    Publication date:

    2013-01-01

    Size:

    7 pages

    ISSN:

    0935-9648

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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