Effects of annealing ambient on the photoluminescence properties of Si-rich oxide/SiO2 multilayer films containing Si-nanocrystals: Fid-Bau Portal

Effects of annealing ambient on the photoluminescence properties of Si-rich oxide/SiO2 multilayer films containing Si-nanocrystals

Wang, X. / Yu, X. / Yu, W. / Feng, H. / Wang, J. / Yin, C. / Lu, W. / Fu, G.

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Effects of annealing ambient on the photoluminescence properties of Si-rich oxide/SiO2 multilayer films containing Si-nanocrystals

Wang, X. / Yu, X. / Yu, W. / Feng, H. / Wang, J. / Yin, C. / Lu, W. / Fu, G.

Effects of annealing ambient on the photoluminescence properties of Si-rich oxide/SiO2 multilayer films containing Si-nanocrystals

Wang, X. / Yu, X. / Yu, W. / Feng, H. / Wang, J. / Yin, C. / Lu, W. / Fu, G.

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Document information

Title:

Effects of annealing ambient on the photoluminescence properties of Si-rich oxide/SiO2 multilayer films containing Si-nanocrystals

Contributors:

Wang, X. (author) / Yu, X. (author) / Yu, W. (author) / Feng, H. (author) / Wang, J. (author) / Yin, C. (author) / Lu, W. (author) / Fu, G. (author)

Published in:

JOURNAL OF MATERIALS SCIENCE ; 49 ; 1353-1358

Publication date:

2014-01-01

Size:

6 pages

ISSN:

0022-2461

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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