A platform for research: civil engineering, architecture and urbanism
Influence of annealing temperature on electrical characteristics of Ti/Au/GaAsN Schottky diode with 0.2% nitrogen incorporation
Influence of annealing temperature on electrical characteristics of Ti/Au/GaAsN Schottky diode with 0.2% nitrogen incorporation
Influence of annealing temperature on electrical characteristics of Ti/Au/GaAsN Schottky diode with 0.2% nitrogen incorporation
Bachir Bouiadjra, W. (author) / Kadaoui, M. a. (author) / Saidane, A. (author) / Henini, M. (author) / Shafi, M. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 22 ; 92-100
2014-01-01
9 pages
Article (Journal)
English
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
The electrical characteristics of Ni/n-GaSb Schottky diode
British Library Online Contents | 2013
|Electrical Characteristics of Ti/4H-SiC Slicidation Schottky Barrier Diode
British Library Online Contents | 2009
|Electrical Characteristics of the Pt/SiNWs/n-Si/Al Schottky Diode Structures
British Library Online Contents | 2011
|Modeling of the Influence of Schottky Barrier Inhomogeneities on SiC Diode Characteristics
British Library Online Contents | 2004
|DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions
British Library Online Contents | 2018
|