A platform for research: civil engineering, architecture and urbanism
A Multilevel Intermediate-Band Solar Cell by InGaN/GaN Quantum Dots with a Strain-Modulated Structure
A Multilevel Intermediate-Band Solar Cell by InGaN/GaN Quantum Dots with a Strain-Modulated Structure
A Multilevel Intermediate-Band Solar Cell by InGaN/GaN Quantum Dots with a Strain-Modulated Structure
Sang, L. (author) / Liao, M. (author) / Liang, Q. (author) / Takeguchi, M. (author) / Dierre, B. (author) / Shen, B. (author) / Sekiguchi, T. (author) / Koide, Y. (author) / Sumiya, M. (author)
ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 26 ; 1414-1420
2014-01-01
7 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Structure and strain state of polar and semipolar InGaN quantum dots
British Library Online Contents | 2012
|American Institute of Physics | 2014
|Optical properties of self-assembled InGaN/GaN quantum dots
British Library Online Contents | 2001
|Numerical simulation of InGaN Schottky solar cell
British Library Online Contents | 2016
|Recombination dynamics of localized excitons in self-formed InGaN quantum dots
British Library Online Contents | 1997
|