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Comparison of 600V Si, SiC and GaN Power Devices

Chowdhury, S. / Stum, Z. / Li, Z.D. / Ueno, K. / Chow, T.P.

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Comparison of 600V Si, SiC and GaN Power Devices

Chowdhury, S. / Stum, Z. / Li, Z.D. / Ueno, K. / Chow, T.P.

Comparison of 600V Si, SiC and GaN Power Devices

Chowdhury, S. / Stum, Z. / Li, Z.D. / Ueno, K. / Chow, T.P.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Comparison of 600V Si, SiC and GaN Power Devices

Contributors:

Chowdhury, S. (author) / Stum, Z. (author) / Li, Z.D. (author) / Ueno, K. (author) / Chow, T.P. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H.

Published in:

Silicon Carbide and Related Materials 2013 ; 971-974

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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