A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Progress in High Voltage SiC and GaN Power Switching Devices
Progress in High Voltage SiC and GaN Power Switching Devices
Progress in High Voltage SiC and GaN Power Switching Devices
Chow, T.P. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H. / Hatayama, T. / Matsuura, H. / Funaki, T. / Sano, Y.
Silicon Carbide and Related Materials 2013 ; 1077-1082
MATERIALS SCIENCE FORUM ; 778/780
2014-01-01
6 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
SiC and GaN High-Voltage Power Switching Devices
| British Library Online Contents | 2000
Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices
| British Library Online Contents | 2006
SiC Devices for High Voltage High Power Applications
| British Library Online Contents | 2004
SiC power devices for high voltage applications
| British Library Online Contents | 1999
SiC Junction Control, an Alternative to MOS Control High Voltage Switching Devices
| British Library Online Contents | 2001