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Simulation study of interface traps and bulk traps in n^+^+GaN/InAlN/AlN/GaN high electron mobility transistors
Simulation study of interface traps and bulk traps in n^+^+GaN/InAlN/AlN/GaN high electron mobility transistors
Simulation study of interface traps and bulk traps in n^+^+GaN/InAlN/AlN/GaN high electron mobility transistors
Molnar, M. (author) / Donoval, D. (author) / Kuzmik, J. (author) / Marek, J. (author) / Chvala, A. (author) / Pribytny, P. (author) / Mikolasek, M. (author) / Rendek, K. (author) / Palankovski, V. (author)
APPLIED SURFACE SCIENCE ; 313 ; 157-161
2014-01-01
5 pages
Article (Journal)
English
DDC:
621.35
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