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Capacitance study of carrier inversion at the amorphous/crystalline silicon heterojunction passivated by different thicknesses of i-layer
Capacitance study of carrier inversion at the amorphous/crystalline silicon heterojunction passivated by different thicknesses of i-layer
Capacitance study of carrier inversion at the amorphous/crystalline silicon heterojunction passivated by different thicknesses of i-layer
Mikolasek, M. (author) / Stuchlikova, L. (author) / Harmatha, L. (author) / Vincze, A. (author) / Nemec, M. (author) / Racko, J. (author) / Breza, J. (author)
APPLIED SURFACE SCIENCE ; 312 ; 152-156
2014-01-01
5 pages
Article (Journal)
English
DDC:
621.35
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