A platform for research: civil engineering, architecture and urbanism
Numerical simulations and modeling of the stability of noble gas atoms in interaction with vacancies in silicon
Numerical simulations and modeling of the stability of noble gas atoms in interaction with vacancies in silicon
Numerical simulations and modeling of the stability of noble gas atoms in interaction with vacancies in silicon
Pizzagalli, L. (author) / Charaf-Eddin, A. (author) / Brochard, S. (author)
COMPUTATIONAL MATERIALS SCIENCE ; 95 ; 149-158
2014-01-01
10 pages
Article (Journal)
English
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Vacancies and interstitial atoms in electron-irradiated silicon
British Library Online Contents | 1997
|Nitrogen interaction with vacancies in silicon
British Library Online Contents | 2004
|DFT calculation of the stability and mobility of noble gas atoms in silicon
British Library Online Contents | 2009
|First-principles study of interaction between vacancies and nitrogen atoms in fcc iron
British Library Online Contents | 2018
|First-principles study of interaction between vacancies and nitrogen atoms in fcc iron
British Library Online Contents | 2018
|