Molecular Beam Epitaxial Growth of 1.5 μm Wavelength GaAs Based Metamorphic InAs Quantum Dots: Fid-Bau Portal

Molecular Beam Epitaxial Growth of 1.5 μm Wavelength GaAs Based Metamorphic InAs Quantum Dots

Wei, Q.-x. / Wang, P.-f. / Ren, Z.-w. / He, Z.-h.

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Molecular Beam Epitaxial Growth of 1.5 μm Wavelength GaAs Based Metamorphic InAs Quantum Dots

Wei, Q.-x. / Wang, P.-f. / Ren, Z.-w. / He, Z.-h.

Molecular Beam Epitaxial Growth of 1.5 μm Wavelength GaAs Based Metamorphic InAs Quantum Dots

Wei, Q.-x. / Wang, P.-f. / Ren, Z.-w. / He, Z.-h.

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Check availability in my library

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Document information

Title:

Molecular Beam Epitaxial Growth of 1.5 μm Wavelength GaAs Based Metamorphic InAs Quantum Dots

Contributors:

Wei, Q.-x. (author) / Wang, P.-f. (author) / Ren, Z.-w. (author) / He, Z.-h. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -HANGZHOU- ; 32 ; 816-820

Publication date:

2014-01-01

Size:

5 pages

ISSN:

1673-2812

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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