A platform for research: civil engineering, architecture and urbanism
InAs quantum dots as charge storing elements for applications in flash memory devices
InAs quantum dots as charge storing elements for applications in flash memory devices
InAs quantum dots as charge storing elements for applications in flash memory devices
Islam, S. M. (author) / Biswas, P. (author) / Banerji, P. (author) / Chakraborty, S. (author)
2015-01-01
6 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Wavelength tunable InAs/InP(100) quantum dots in 1.55-mm telecom devices
British Library Online Contents | 2008
|Charging dynamics in vertically aligned InAs quantum dots
British Library Online Contents | 2002
|Topography and electrical properties of InAs quantum dots
British Library Online Contents | 2000
|Carrier dynamics in small InAs/GaAs quantum dots
British Library Online Contents | 2002
|Deep levels induced by InAs/GaAs quantum dots
British Library Online Contents | 2006
|