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Atomically precise self-organization of perfectly ordered gadolinium-silicide nanomeshes controlled by anisotropic electromigration-induced growth on Si(110)-16x2 surfaces
Atomically precise self-organization of perfectly ordered gadolinium-silicide nanomeshes controlled by anisotropic electromigration-induced growth on Si(110)-16x2 surfaces
Atomically precise self-organization of perfectly ordered gadolinium-silicide nanomeshes controlled by anisotropic electromigration-induced growth on Si(110)-16x2 surfaces
Hong, I. H. (author) / Chen, T. M. (author) / Tsai, Y. F. (author)
APPLIED SURFACE SCIENCE ; 349 ; 49-58
2015-01-01
10 pages
Article (Journal)
English
DDC:
621.35
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