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    Rapidly counting atomic planes of ultra-thin MoSe2 nanosheets (1 ≤ n ≤ 4) on SiO2/Si substrate

    New search for: Wang, Y. P.
    New search for: Zhou, H. J.
    New search for: Zhao, G. H.
    New search for: Xia, T. L.
    New search for: Wang, L.
    New search for: Zhang, L. Y.

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    Rapidly counting atomic planes of ultra-thin MoSe2 nanosheets (1 ≤ n ≤ 4) on SiO2/Si substrate

    New search for: Wang, Y. P.
    New search for: Zhou, H. J.
    New search for: Zhao, G. H.
    New search for: Xia, T. L.
    New search for: Wang, L.
    New search for: Zhang, L. Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Rapidly counting atomic planes of ultra-thin MoSe2 nanosheets (1 ≤ n ≤ 4) on SiO2/Si substrate

    New search for: Wang, Y. P.
    New search for: Zhou, H. J.
    New search for: Zhao, G. H.
    New search for: Xia, T. L.
    New search for: Wang, L.
    New search for: Zhang, L. Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
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    Document information
    Title:

    Rapidly counting atomic planes of ultra-thin MoSe2 nanosheets (1 ≤ n ≤ 4) on SiO2/Si substrate

    Contributors:

    Wang, Y. P. (author) / Zhou, H. J. (author) / Zhao, G. H. (author) / Xia, T. L. (author) / Wang, L. (author) / Zhang, L. Y. (author)

    Published in:

    RARE METALS -BEIJING- ENGLISH EDITION ; 35 ; 632-636

    Publication date:

    2016-01-01

    Size:

    5 pages

    ISSN:

    1001-0521

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  669

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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