Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Predicted semiconductor to metal transition from LiBSi2 to RbBSi2 by first-principles calculations

    New search for: Zhang, H.
    New search for: Ren, J.
    New search for: Wu, L.
    New search for: Zhang, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Predicted semiconductor to metal transition from LiBSi2 to RbBSi2 by first-principles calculations

    New search for: Zhang, H.
    New search for: Ren, J.
    New search for: Wu, L.
    New search for: Zhang, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Predicted semiconductor to metal transition from LiBSi2 to RbBSi2 by first-principles calculations

    New search for: Zhang, H.
    New search for: Ren, J.
    New search for: Wu, L.
    New search for: Zhang, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Predicted semiconductor to metal transition from LiBSi2 to RbBSi2 by first-principles calculations

    Contributors:

    Zhang, H. (author) / Ren, J. (author) / Wu, L. (author) / Zhang, J. (author)

    Published in:

    COMPUTATIONAL MATERIALS SCIENCE ; 124 ; 267-272

    Publication date:

    2016-01-01

    Size:

    6 pages

    ISSN:

    0927-0256

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.1 / 510

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Predicted semiconductor to metal transition from LiBSi2 to RbBSi2 by first-principles calculations

    Zhang, Huijun / Ren, Jiadong / Wu, Lailei et al. | British Library Online Contents | 2016

    Elastic and electronic properties of LiBSi2 under pressure from first principles

    Liu, M. / Cheng, Y. / Yuan, J. N. et al. | British Library Online Contents | 2014

    Predicted semiconductor to metal transition from LiBSi2 to RbBSi2 by first-principles calculations

    Zhang, Huijun / Ren, Jiadong / Wu, Lailei et al. | British Library Online Contents | 2016

    Site preference, structural and magnetic properties of La3Co29−xNixSi4B10 predicted by first-principles calculations

    Ren, Jie / Wang, Xiaoxu | British Library Online Contents | 2017

    Adsorption of phosgene molecule on the transition metal-doped graphene: First principles calculations

    Zhang, Tong / Sun, Hao / Wang, Fengdi et al. | British Library Online Contents | 2017

    Back to top