A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Aluminum Co-Doping Method to Increase the Boron and Phosphorous Concentration Limits Allowed in Silicon Feedstock for Solar Cells
Aluminum Co-Doping Method to Increase the Boron and Phosphorous Concentration Limits Allowed in Silicon Feedstock for Solar Cells
Aluminum Co-Doping Method to Increase the Boron and Phosphorous Concentration Limits Allowed in Silicon Feedstock for Solar Cells
You, Yuliu (author) / Morita, Kazuki (author)
Materials transactions ; 58 ; 1439-1443
2017-01-01
5 pages
Article (Journal)
English
DDC:
620.1105
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
High-conductive nanocrystalline silicon with phosphorous and boron doping
| British Library Online Contents | 2010
Unilateral Rate Increase Allowed
Wiley | 1996
Increase allowed before new facilities operational
Wiley | 1982
Phosphorous doping in beta-irondisilicide by co-sputtering method
| British Library Online Contents | 2002
Effect of oxygen ambient during phosphorous diffusion on silicon solar cell
| American Institute of Physics | 2012