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    Impurity free vacancy diffusion induced quantum well intermixing based on hafnium dioxide films

    New search for: Lin, Tao
    New search for: Zhang, Haoqing
    New search for: Sun, Hang
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    Impurity free vacancy diffusion induced quantum well intermixing based on hafnium dioxide films

    New search for: Lin, Tao
    New search for: Zhang, Haoqing
    New search for: Sun, Hang
    New search for: Yang, Chen
    New search for: Lin, Nan

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Impurity free vacancy diffusion induced quantum well intermixing based on hafnium dioxide films

    New search for: Lin, Tao
    New search for: Zhang, Haoqing
    New search for: Sun, Hang
    New search for: Yang, Chen
    New search for: Lin, Nan

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Impurity free vacancy diffusion induced quantum well intermixing based on hafnium dioxide films

    Contributors:

    Lin, Tao (author) / Zhang, Haoqing (author) / Sun, Hang (author) / Yang, Chen (author) / Lin, Nan (author)

    Published in:

    Materials science in semiconductor processing ; 29 ; 150-154

    Publication date:

    2015-01-01

    Size:

    5 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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