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    Effect of AlN buffer layer thickness on the properties of GaN films grown by pulsed laser deposition

    New search for: Yang, Weijia
    New search for: Wang, Wenliang
    New search for: Liu, Zuolian
    New search for: Li, Guoqiang

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    Effect of AlN buffer layer thickness on the properties of GaN films grown by pulsed laser deposition

    New search for: Yang, Weijia
    New search for: Wang, Wenliang
    New search for: Liu, Zuolian
    New search for: Li, Guoqiang

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Effect of AlN buffer layer thickness on the properties of GaN films grown by pulsed laser deposition

    New search for: Yang, Weijia
    New search for: Wang, Wenliang
    New search for: Liu, Zuolian
    New search for: Li, Guoqiang

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Effect of AlN buffer layer thickness on the properties of GaN films grown by pulsed laser deposition

    Contributors:

    Yang, Weijia (author) / Wang, Wenliang (author) / Liu, Zuolian (author) / Li, Guoqiang (author)

    Published in:

    Materials science in semiconductor processing ; 39 ; 499-505

    Publication date:

    2015-01-01

    Size:

    7 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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