A platform for research: civil engineering, architecture and urbanism
Energy band diagram and energy band offsets of Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface determined by capacitance-voltage measurements
Energy band diagram and energy band offsets of Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface determined by capacitance-voltage measurements
Energy band diagram and energy band offsets of Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface determined by capacitance-voltage measurements
Cheriet, A. (author) / Mebarki, M. (author) / Christol, P. (author) / Aït-kaci, H. (author)
Materials science in semiconductor processing ; 66 ; 50-55
2017-01-01
6 pages
Article (Journal)
English
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2012
|Band offsets in ITO/Ga2O3 heterostructures
British Library Online Contents | 2017
|Measurements of the energy band offsets of Si~1~-~xGe/Si and Ge~1~-~yC~y/Ge heterojunctions
British Library Online Contents | 1996
|Band structures and band offsets of high K dielectrics on Si
British Library Online Contents | 2002
|Tight binding modeling of band gaps and band offsets in heterostructures
British Library Online Contents | 2005
|