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    Corrigendum to “A simple route to deposit SiO2 film with resistivity >109 Ω·μm” [Mater. Lett. 211 (2018) 277–280]

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    Corrigendum to “A simple route to deposit SiO2 film with resistivity >109 Ω·μm” [Mater. Lett. 211 (2018) 277–280]

    New search for: Wang, Dengyao
    New search for: Liu, Jindong
    New search for: Lv, Zhixuan
    New search for: Tao, Hualong
    New search for: Cui, Yunxian
    New search for: Wang, Hualin
    New search for: Liu, Shimin
    New search for: Liu, Chaoqian
    New search for: Wang, Nan
    New search for: Jiang, Weiwei
    New search for: Chai, Weiping
    New search for: Ding, Wanyu

    Access

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    Corrigendum to “A simple route to deposit SiO2 film with resistivity >109 Ω·μm” [Mater. Lett. 211 (2018) 277–280]

    New search for: Wang, Dengyao
    New search for: Liu, Jindong
    New search for: Lv, Zhixuan
    New search for: Tao, Hualong
    New search for: Cui, Yunxian
    New search for: Wang, Hualin
    New search for: Liu, Shimin
    New search for: Liu, Chaoqian
    New search for: Wang, Nan
    New search for: Jiang, Weiwei
    New search for: Chai, Weiping
    New search for: Ding, Wanyu

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
    Title:

    Corrigendum to “A simple route to deposit SiO2 film with resistivity >109 Ω·μm” [Mater. Lett. 211 (2018) 277–280]

    Contributors:

    Wang, Dengyao (author) / Liu, Jindong (author) / Lv, Zhixuan (author) / Tao, Hualong (author) / Cui, Yunxian (author) / Wang, Hualin (author) / Liu, Shimin (author) / Liu, Chaoqian (author) / Wang, Nan (author) / Jiang, Weiwei (author)

    Published in:

    MATERIALS LETTERS ; 213 ; 399

    Publication date:

    2018-01-01

    Size:

    399 pages

    ISSN:

    0167-577X

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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