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    Atomic structure and potential energy of β-Si3N4/diamond interface in the process of detachment: A first-principles study

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    Atomic structure and potential energy of β-Si3N4/diamond interface in the process of detachment: A first-principles study

    New search for: Chen, Naichao
    New search for: Chen, Yingchao
    New search for: Ai, Jun
    New search for: Li, Cheng
    New search for: He, Ping
    New search for: Ren, Jianxing
    New search for: Zhu, Quanjun

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Atomic structure and potential energy of β-Si3N4/diamond interface in the process of detachment: A first-principles study

    New search for: Chen, Naichao
    New search for: Chen, Yingchao
    New search for: Ai, Jun
    New search for: Li, Cheng
    New search for: He, Ping
    New search for: Ren, Jianxing
    New search for: Zhu, Quanjun

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Atomic structure and potential energy of β-Si3N4/diamond interface in the process of detachment: A first-principles study

    Contributors:

    Chen, Naichao (author) / Chen, Yingchao (author) / Ai, Jun (author) / Li, Cheng (author) / He, Ping (author) / Ren, Jianxing (author) / Zhu, Quanjun (author)

    Published in:

    Applied surface science ; 434 ; 211-214

    Publication date:

    2018-01-01

    Size:

    4 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.44

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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